View MRF9002R2_378572.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF9002R2/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistor Array
MRF9002R2
1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. The device is in a PFP - 16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact. * Typical Performance at 960 MHz, 26 Volts Output Power -- 2 Watts Per Transistor Power Gain -- 18 dB Efficiency -- 50% * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Freescale Semiconductor, Inc...
CASE 978 - 03 PLASTIC PFP - 16
PIN CONNECTIONS
N.C. N.C. GATE1 N.C. GATE2 N.C. GATE3 N.C. 1 2 3 4 5 6 7 8 (Top View) NOTE: Exposed backside flag is source terminal for transistors. 16 15 14 13 12 11 10 9 DRAIN 1-1 DRAIN 1-2 DRAIN 2-1 DRAIN 2-2 N.C. DRAIN 3-1 DRAIN 3-2 N.C.
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Dissipation Per Transistor @ TC = 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case, Single Transistor Symbol RJC Value 65 - 0.5, + 15 4 - 65 to +150 150 Unit Vdc Vdc Watts C C
THERMAL CHARACTERISTICS
Value 12 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 4
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF9002R2 1
Freescale Semiconductor, Inc.
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22 - A113 Rating 3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.1 Adc) VGS(th) VGS(Q) VDS(on) 2.4 3 -- -- -- 0.3 4 5 -- Vdc Vdc Vdc
FUNCTIONAL TESTS (Per Transistor in Motorola Test Fixture, 50 ohm system)
Freescale Semiconductor, Inc...
Common - Source Amplifier Power Gain @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Input Return Loss @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 2 W CW, IDQ = 25 mA, f = 960.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Gps IRL P1dB
15 35 -- 34
18 50 - 15 37
-- -- -9 --
dB % dB dBm
No Degradation In Output Power
MRF9002R2 2
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
VGS1 + C7 Z2 C14 VGS2 Z6 C3 VGS3 Z11 C5 Z12 C15 Z7 C13 + C11 R3 Z13 C17 C6 L3 L6 Z14 + C12 Z15 VDS3 RF3 OUTPUT + C9 R2 Z8 C18 C4 L2 L5 Z9 + C10 Z10 VDS2 RF2 OUTPUT R1 Z3 C16 C1 C2 L1 L4 DUT Z4 + C8 Z5 VDS1 RF1 OUTPUT
RF1 INPUT
Z1
RF2 INPUT
RF3 INPUT
Freescale Semiconductor, Inc...
Figure 1. MRF9002R2 Broadband Test Circuit Schematic
Table 1. MRF9002R2 Broadband Test Circuit Component Designations and Values
Designators C1 - C6 C7 - C12 C13 C14, C15 C16, C17 C18 L1 - L6 R1 - R3 Z1, Z11 Z2, Z7, Z12 Z3, Z8, Z13 Z4, Z14 Z5, Z15 Z6 Z9 Z10 PCB Raw PCB Material Bedstead Description 33 pF Chip Capacitors (0805) 1.0 F, 35 V Tantalum Capacitors, B Case, Kemet 8.2 pF Chip Capacitor (0805) 10 pF Chip Capacitors (0805) 2.7 pF Chip Capacitors (0805) 3.3 pF Chip Capacitor (0805) 12 nH Chip Inductors (0805) 0 W Chip Resistors (0805) 1.16 x 28.5 mm Microstrip 0.65 x 5.6 mm Microstrip 0.65 x 2.6 mm Microstrip 1.16 x 19.5 mm Microstrip 1.16 x 17.5 mm Microstrip 1.16 x 12.9 mm Microstrip 1.16 x 27.2 mm Microstrip 1.16 x 4.3 mm Microstrip Etched Circuit Board Rogers RO4350, 0.020, 2.5, x 2.5, er = 3.5 Copper Heatsink
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF9002R2 3
Freescale Semiconductor, Inc.
RF1 INPUT C1 VGS1 VGS2 C7 C16 C8 RF1 OUTPUT C2 VDS1 VDS2
C10 C9 L1 RF2 INPUT C3 L2 R2 C13 R3 L3 MRF9002 960 MHz Rev. B C11 C15 L6 R1
Pin 1
C14
L4
L5
RF2 OUTPUT C18 C4
Freescale Semiconductor, Inc...
C12 C17 VDS3
VGS3 C5 RF3 INPUT C6
RF3 OUTPUT
Figure 2. MRF9002R2 Broadband Test Circuit Component Layout
MRF9002R2 4
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
35 33 Pout , OUTPUT POWER (dBm) 31 29 27 25 23 21 19 17 15 0 2 4 6 8 10 12 14 Pin, INPUT POWER (dBm) VDS = 26 Vdc IDQ = 25 mA f = 960 MHz Single-Tone Pout 19.5 19.25 Gps 19 18.75 18.5 18.25 18 17.75 17.5 17.25 17 16 16 15 10 15 20 25 30 Pout, OUTPUT POWER (dBm) G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 21 20 19 18 17 VDS = 26 Vdc f = 960 MHz Single-Tone 35 40 25 mA 75 mA 50 mA 23 22 100 mA
Freescale Semiconductor, Inc...
Figure 3. Output Power and Power Gain versus Input Power
20.3 Gps G ps , POWER GAIN (dB) 20.2 -29 -28 -20 -25 -30 -35 -40 -45 -50 -55
Figure 4. Power Gain versus Output Power
20.1 IMD 20 Pout = 2 W (PEP) IDQ = 25 mA f1 = 960.0 MHz, f2 = 960.1 MHz 22 23 24 25 26 27 28 29 30
-30
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc)
25 mA 50 mA 75 mA VDS = 26 Vdc f1 = 960.0 MHz, f2 = 960.1 MHz 10 15 20 25 30 35 40
-31
-60 100 mA -65 5
19.9
-32
VDS, DRAIN SOURCE SUPPLY (VOLTS)
Pout, OUTPUT POWER (dBm) PEP
Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage
0 -10 -20 3rd Order -30 -40 5th Order -50 7th Order -60 -70 10 15 20 25 30 35 40 Pout, OUTPUT POWER (dBm) VDS = 26 Vdc f1 = 960.0 MHz, f2 = 960.1 MHz 41 39 Pout , OUTPUT POWER (dBm) 37 35 33 31 29 27 25 925
Figure 6. Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
Pin = 20 dBm
15 dBm VDS = 26 Vdc IDQ = 25 mA Single-Tone
10 dBm
935
945
955
965
975
985
f, FREQUENCY (MHz)
Figure 7. Intermodulation Distortion Products versus Output Power
Figure 8. Output Power versus Frequency
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF9002R2 5
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
12 11 10 9 C, CAPACITANCE (pF) 8 7 6 5 4 3 2 22 23 24 25 26 27 28 29 30 Crss Coss Ciss
Freescale Semiconductor, Inc...
VDS, DRAIN SOURCE SUPPLY (VOLTS)
Figure 9. Capacitance versus Drain Source Voltage
MRF9002R2 6
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TRANSISTORS 1 and 2
TRANSISTOR 3
Zo = 50 T3 985 MHz Zsource f = 925 MHz
Zo = 50
T1 985 MHz Zsource f = 925 MHz T2 985 MHz Zsource
T2 f = 925 MHz Zload 985 MHz
Freescale Semiconductor, Inc...
f = 925 MHz
T1 985 MHz Zload f = 925 MHz
985 MHz T3 Zload f = 925 MHz
VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.5 + j13.3 4.3 + j15.3 4.1 + j15.8 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 6.0 + j12.3 5.9 + j14.3 5.8 + j16.5 Transistor 2 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP f MHz 925 960 985 Zsource 4.3 + j12.2 4.3 + j14.0 3.9 + j15.9 Transistor 3 Zload 23.1 + j6.5 22.8 + j8.4 22.6 + j9.3 Zload 19.7 + j27.8 22.0 + j23.9 22.5 + j25.4 Input Matching Network Device Under Test Output Matching Network Zload 23.4 + j9.2 23.2 + j10.4 23.0 + j11.1 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF9002R2 7
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MRF9002R2 8
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF9002R2 9
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MRF9002R2 10
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
h X 45 _
A E2
1 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100
14 x e
D e/2
D1
8
9
E1
8X
B
BOTTOM VIEW
E CB
S
bbb
M
Freescale Semiconductor, Inc...
b1 c
Y A A2
DATUM PLANE SEATING PLANE
H
C
SECT W - W
L1
ccc C
q
W W L 1.000 0.039 DETAIL Y A1
GAUGE PLANE
CASE 978 - 03 ISSUE B PLASTIC PFP- 16
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
CCC EE CCC EE
b aaa
M
c1
CA
S
DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc
MRF9002R2 11
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF9002R2 12
For More Information On This Product, Go to: www.freescale.com
MRF9002R2/D MOTOROLA RF DEVICE DATA
This datasheet has been download from: www..com Datasheets for electronics components.

▲Up To Search▲

Price & Availability of MRF9002R2

	To Download MRF9002R2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .